宇航计测技术 ›› 2024, Vol. 44 ›› Issue (5): 45-49.doi: 10.12060/j.issn.1000-7202.2024.05.07

• 量值传递技术 • 上一篇    下一篇

PCM设备电流参数在片校准方法研究

丁晨,刘岩,乔玉娥,翟玉卫,吴爱华   

  1. 中国电子科技集团公司第十三研究所,石家庄 050051
  • 出版日期:2024-10-15 发布日期:2024-11-11
  • 作者简介:丁晨(1991-),男,工程师,本科,主要研究方向:电磁计量、在片电学参数计量技术。

Research on On-wafer Calibration Method for PCM Equipment Current Parameters

DING Chen,LIU Yan,QIAO Yue,ZHAI Yuwei,WU Aihua   

  1. The 13th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050051,China
  • Online:2024-10-15 Published:2024-11-11

摘要: 针对PCM设备电流参数无法在探针端进行在片校准问题,提出了一种电流参数在片校准方法。利用半导体工艺中薄膜溅射法、离子注入法,研制在片取样电阻标准件,通过组建有温度控制的定标系统对标准件进行定标,测量结果可溯源至直流电阻参数国家最高基准。PCM设备对在片取样电阻标准件施加电压,并联标准电压表,通过加压测流的方法实现对电流参数1 nA~100 mA的在片校准,有效解决了PCM设备电流参数在片校准问题,保障了该设备电流参数在探针端的准确性。

关键词: 电流, 探针, 校准, 半导体, 电阻

Abstract: An on-wafer calibration method was provided to solve the problem that the current parameters of the PCM equipment could not to be calibrated on probe end.The on-wafer sampling resistance standards were developed by thin-film sputtering and ion implantation method of semiconductor process.A calibrating system with temperature control function was established,which could calibrate the standards.The calibration results could be traced to the highest national standard of DC resistance parameters.PCM equipment applied voltage to on-wafer sampling resistance standards and parallel connection standard voltmeter.The on-wafer calibration of current parameters 1 nA~100 mA by applying voltage to measure current.The method could carry out effective on-wafer calibration of current parameters for PCM equipment and ensured the accuracy of the current parameters of the PCM equipment on probe end.

Key words: Current, Probe, Calibration, Semiconductor, Resistance

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